Analog Electronics interview questions

27 Analog Electronics questions from the ECE Core bank, written for Indian campus drives and tech interviews. Every question has a verified answer and an AI-tutor explanation on placd.

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1. What is Diode cut-in voltage?

Junior
  1. A.RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  2. B.forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially
  3. C.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  4. D.capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier

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2. Which term means: "forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially"?

Junior
  1. A.Miller effect
  2. B.Negative feedback
  3. C.Diode cut-in voltage
  4. D.Wien bridge oscillator

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3. Which statement is correct?

Junior
  1. A.Diode cut-in voltage — RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  2. B.Diode cut-in voltage — capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier
  3. C.Diode cut-in voltage — condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°
  4. D.Diode cut-in voltage — forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially

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4. What is Zener diode?

Junior
  1. A.returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  2. B.RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  3. C.reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  4. D.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs

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5. Which term means: "reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference"?

Junior
  1. A.Diode cut-in voltage
  2. B.Zener diode
  3. C.Miller effect
  4. D.BJT active region

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6. Which statement is correct?

Junior
  1. A.Zener diode — RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  2. B.Zener diode — returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  3. C.Zener diode — forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially
  4. D.Zener diode — reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference

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7. What is BJT active region?

Junior
  1. A.reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  2. B.condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°
  3. C.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  4. D.returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift

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8. Which term means: "operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs"?

Junior
  1. A.Negative feedback
  2. B.MOSFET saturation region
  3. C.Wien bridge oscillator
  4. D.BJT active region

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9. Which statement is correct?

Junior
  1. A.BJT active region — returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  2. B.BJT active region — operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  3. C.BJT active region — capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier
  4. D.BJT active region — reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference

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10. What is Voltage-divider bias?

Mid
  1. A.capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier
  2. B.RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  3. C.BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE
  4. D.condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°

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11. Which term means: "BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE"?

Mid
  1. A.Barkhausen criterion
  2. B.Voltage-divider bias
  3. C.MOSFET saturation region
  4. D.Diode cut-in voltage

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12. Which statement is correct?

Mid
  1. A.Voltage-divider bias — reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  2. B.Voltage-divider bias — operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  3. C.Voltage-divider bias — BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE
  4. D.Voltage-divider bias — condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°

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13. What is MOSFET saturation region?

Mid
  1. A.region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers
  2. B.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  3. C.BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE
  4. D.forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially

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14. Which term means: "region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers"?

Mid
  1. A.Miller effect
  2. B.Voltage-divider bias
  3. C.MOSFET saturation region
  4. D.Zener diode

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15. Which statement is correct?

Mid
  1. A.MOSFET saturation region — forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially
  2. B.MOSFET saturation region — region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers
  3. C.MOSFET saturation region — reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  4. D.MOSFET saturation region — BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE

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16. What is Negative feedback?

Mid
  1. A.forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially
  2. B.returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  3. C.reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  4. D.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs

Answer + AI explanation with Pro

17. Which term means: "returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift"?

Mid
  1. A.BJT active region
  2. B.Miller effect
  3. C.Voltage-divider bias
  4. D.Negative feedback

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18. Which statement is correct?

Mid
  1. A.Negative feedback — BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE
  2. B.Negative feedback — returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  3. C.Negative feedback — reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  4. D.Negative feedback — condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°

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19. What is Barkhausen criterion?

Mid
  1. A.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  2. B.RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  3. C.condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°
  4. D.BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE

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20. Which term means: "condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°"?

Mid
  1. A.BJT active region
  2. B.Miller effect
  3. C.MOSFET saturation region
  4. D.Barkhausen criterion

Answer + AI explanation with Pro

21. Which statement is correct?

Mid
  1. A.Barkhausen criterion — condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°
  2. B.Barkhausen criterion — reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  3. C.Barkhausen criterion — operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  4. D.Barkhausen criterion — region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers

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22. What is Miller effect?

Senior
  1. A.region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers
  2. B.reverse-biased diode operated deliberately in breakdown so it holds a nearly constant voltage, serving as a shunt regulator or voltage reference
  3. C.capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier
  4. D.operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs

Answer + AI explanation with Pro

23. Which term means: "capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier"?

Senior
  1. A.Zener diode
  2. B.Voltage-divider bias
  3. C.Miller effect
  4. D.Wien bridge oscillator

Answer + AI explanation with Pro

24. Which statement is correct?

Senior
  1. A.Miller effect — condition for sustained oscillation: loop gain magnitude exactly unity and total phase shift around the loop 0° or an integer multiple of 360°
  2. B.Miller effect — capacitance between the input and output of an inverting stage appears at the input multiplied by (1 + |gain|), which sets the upper cut-off of a common-emitter amplifier
  3. C.Miller effect — returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  4. D.Miller effect — RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output

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25. What is Wien bridge oscillator?

Senior
  1. A.RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output
  2. B.region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers
  3. C.returning a fraction β of the output in antiphase to the input divides gain by (1 + Aβ) while extending bandwidth by the same factor and cutting distortion and drift
  4. D.forward voltage at which a junction diode begins to conduct appreciably, about 0.7 V for silicon and 0.3 V for germanium, after which current rises exponentially

Answer + AI explanation with Pro

26. Which term means: "RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output"?

Senior
  1. A.Negative feedback
  2. B.Wien bridge oscillator
  3. C.Barkhausen criterion
  4. D.MOSFET saturation region

Answer + AI explanation with Pro

27. Which statement is correct?

Senior
  1. A.Wien bridge oscillator — BJT biasing with a base divider and emitter resistor whose negative feedback holds the Q-point nearly independent of β, provided divider resistance is well below β·RE
  2. B.Wien bridge oscillator — region where VDS exceeds VGS − Vt so the channel pinches off and drain current depends only on gate voltage, making the device a voltage-controlled current source for amplifiers
  3. C.Wien bridge oscillator — operating region with the base-emitter junction forward biased and base-collector reverse biased, where collector current is β times base current and amplification occurs
  4. D.Wien bridge oscillator — RC oscillator using a lead-lag network in positive feedback, oscillating at 1/(2πRC) and requiring an amplifier gain of exactly 3 for audio-frequency sine output

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